| PART |
Description |
Maker |
| AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor(4.8 V NPN 硅双极型普通射极晶体管)
|
Agilent(Hewlett-Packard)
|
| AT31625 |
NPN Common Emitter Medium Power Output Transistor
|
Hewlett-Packard
|
| TD62593 TD62593AFN TD62594AFN TD62597AFN TD62598AF |
8CH SINGLE DRIVER : COMMON EMITTER 8路单驱动：共发射
8ch SINGLE DRIVER:COMMON EMITTER
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| PWE4812D-3W |
DUAL OUTPU DIP PACKAGE DC-DC CONVERTER
|
MORNSUN Science& Techno...
|
| 23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor
2.5 Watts, 20 Volts, Class A Linear to 2300 MHz
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.2A I(C) | FO-41BVAR
|
GHZTECH[GHz Technology]
|
| MS1506 |
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 40; P(in) (W): 5; Gain (dB): 9; Vcc (V): 13.6; Cob (pF): 95; fO (MHz): 0; Case Style: M135 VHF BAND, Si, NPN, RF POWER TRANSISTOR
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 1920A20 |
20 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1819AB12 |
12 W, 25 V, 1808-1880 MHz common emitter transistor
|
GHz Technology
|
